This project is a national cooperative project supported by the German Ministry of Eduction and Research (BMBF) and is entitled "Epitaxy of monolithically integrated III-V materials on silicon as light emitter" (Monalisa). The project is heading on a break-through in CMOS compatible growth techniques to allow a direct combination of high quality optically active III-V materials on silicon. Nanostructure techniques and self-organization phenomena are used to overcome current restrictions on crystal quality degeneration due to the high lattice mismatch between Si and III-V materials-
Five groups are working on different approaches to achieve the final goal of highly efficient light emitting diodes monolithically integrated on silicon.
The five groups are:
- Paul Drude Institute of Solid State Electronics (PDI), Berlin (project coordinator)
- Institute for Semiconductor Technology, University of Braunschweig
- Institute of Nanostructure Technology and Analytics (INA), University of Kassel
- Enterprise of Applied Micro- and Optoelectronics (AMO), Aachen
- Osram Opto Semiconductors GmbH, Regensburg
The INA group is focussing on self-organized growth processes in an molecular beam epitaxy environment to develop III-V quantum dot structures embedded in silicon matrix. The final goal is here to demonstrate an electrically driven light emitter on silicon.
The project is funded from August 2008 to July 2011.