2014

Der Zu­griff auf Ori­gin­ald­ateien ist pass­wort­geschützt (nur für in­terne Nutzung)

Fachzeits­chriften

Kon­fer­en­zbeiträge

  • G. Eisenstein, J.P. Reithmaier, "Quantum coherent interactions in semiconductor nanostructure optical gain media operating at room temperature", Photonics Europe, Brussels (invited, April 2014)
  • J.P. Reithmaier, "Epitaxy of InP-based Quantum Dot Materials and Devices", green photonics symposium, Technion, Israel (invited, June 2014) (pptx-File, 76 MB) (pdf-File of announcement)
  • J.P. Reithmaier, G. Eisenstein, "1.5 µm high-gain quantum dot materials and devices for future high-capacitance optical communications systems", Optoelectronics and Communications Conference (OECC), Melbourne, Australia (invited, July 2014) (pptx-File, 11 MB) (pdf-File of proceed.)
  • J.P. Reithmaier, "III-V quantum dot/dash material for Si platform for high bit rate optical communication", Summer School on Silicon Photonics, University of Ghent, Belgium (invited, July 2014) (pptx-File, 19 MB)
  • A. DeRossi, S. Combrié, G. Lehoucq, G. Moille, M. Gay, L. Bramerie, J.P. Reithmaier, S. Malaguti, G. Bellanca and S. Trillo, "An efficient all-optical modulator based on photonic crystals cavities and applications", Int. Conf. on Transparent Optical Networks (ICTON), Graz, Austria (invited, July 2014) (pdf-File of proceed.)
  • J.P. Reithmaier, M. Benyoucef, V. Sichkovskyi, "High- and low-density InP based 1.5µm emitting semiconductor quantum dot materials for high-performance communication lasers and single photon emitters", Sino-German Workshop, Berlin (invited, Oct. 2014) (pptx-File, 29 MB)
  • J.P. Reithmaier, M. Benyoucef, V. Sichkovskyi, "High- und Low-Density 1.5µm Emitting QDs for Quantum and Classical Communication", German-Korean-French Workshop, South Korea (invited, Oct. 2014) (pptx-File, 30 MB)
  • A. Becker, V. Sichkovskyi, A. Rippien, F. Schnabel and J.P. Reithmaier, "InP-based widely tunable quantum dot distributed feedback laser with monolithically integrated heater", InP and Rel. Comp. Conf. (IPRM), Montpellier, France (May, 2014)
  • A. Capua, O. Karni, G. Eisenstein, V. Ivanov, V. Sichkovskyi, J.P. Reithmaier, "Controlled modification of the electronic wavefunction and direct observation of quantum decoherence in a room-temperature quantum-dot semiconductor optical amplifier", FF1A.4, Int. Conf. on Lasers and Electro Optics (CLEO), San José, CA (May, 2014)
  • A. Voss, C. Popov, H. Wei, M. Giese, M. Stengl, J.P. Reithmaier, C. Popov, "Diamond‐based platforms for long‐term growth and investigation of neurons", Int. Meeting on Substrate-Integrated Microelectrode Arrays, Reutlingen, Germany (July, 2014)
  • P. Krawiec, J.P. Reithmaier, M. Benyoucef, "Growth and characterization of site-controlled InAs quantum dots on prepatterned GaAs substrates", Int. Workshop on Epitaxial Semiconductors On Patterned Substrates And Novel Index Surfaces (ESPS-NIS), Traunkirchen, Austria (July 2014)
  • S. Combrie, A. Martin, G. Moille, G.Lehoucq, A. De Rossi, J.P. Reithmaier, L. Bramerie, and M. Gay, "An Efficient All-Optical Gate Based on Photonic Crystals Cavities and Applications", Int. Conf. on Transport Optical Networks (ICTON), Graz, Austria (July, 2014), Conf. Proceed., Th.A6.4
  • S. Banyoudeh, J.P. Reithmaier, "Recent advances in growth of high density InP based InAs/InGaAlAs quantum dots with reduced size inhomogeneity", Int. Conf. on Molecular Beam Epitaxy (ICMBE), Flagstaff, Arizona, USA (September, 2014)
  • M. Yacob, J.P. Reithmaier, M. Benyoucef, "Low-density InP-based quantum dots emitting around 1.5 μm telecom wavelengths", Int. Conf. on Nonlinear Optics and Excitation Kinetics in Semiconductors (NOEKS), Bremen, Germany (September 2014)