2016

down­load of ori­ginal files is pass­word pro­tec­ted (only in­ternal ac­cess)

Journal Pa­pers

Con­fer­ence Con­tri­bu­tions

  • J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, A. Rippien, F. Schnabel, B. Bjelica, B. Witzigmann, O. Eyal, G. Eisenstein, "The impact of low-dimensional gain material on emission linewidth and modulation speed in semiconductor lasers", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (invited talk, January 2016). (pptx-File, 8 MB)

  • J.P. Reithmaier, M. Benyoucef, "III-V / Si Integration for Photonics", spring meeting of electrochemical society (ECS), San Diego, USA (invited talk, May 2016).

    • J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, O. Eyal, G. Eisenstein, "InP-based quantum dot lasers for high-speed optical communication", Compound Semicond. Week (CSW), Toyama, Japan (invited talk, June 2016).
      • J.P. Reithmaier, "III-V integration on Si for photonics", IEEE Summer Topicals meeting on Emerging Technology for Integrated Photonics, Newport Beach, CA, USA (invited talk, July 2016).
        • J.P. Reithmaier, "Efficient quantum dot based light sources for silicon photonics", ECOC Sunday Workshop on Next Generation Ultra-Broadband Silicon Photonics Based Integrated Circuits, Düsseldorf, Germany (invited talk, September 2016).

        • J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, O. Eyal, G. Eisenstein, "1.5 µm quantum dot lasers for high-speed direct modulation and narrow linewidth emission", IEEE Photonics Conf., Waikoloa Village, Hawaii, USA (invited talk, October 2016).
              • O. Eyal, G. Eisenstein, S. Banyoudeh, A. Abdollahinia, F. Schnabel and J.P. Reithmaier, "High-Speed InP-Based Quantum Dot Lasers With Low Temperature Sensitivity", Conf. on Lasers & Electro-Optics (CLEO), San José, CA, USA (June, 2016).

              • A. Kors, M. Yacob, J. P. Reithmaier and M. Benyoucef, “InP-based photonic crystal microcavities embedded with InAs quantum dots for telecom wavelengths”, Hybrid Systems for Quantum Optics, Bad Honnef, Germany (January 2016).
              • A. Kors, K. Fuchs, M. Yacob, J. P. Reithmaier and M. Benyoucef, “InP-based photonic crystal microcavities embedded with InAs quantum dots for telecom wavelengths”, DPG, Regensburg, Germany (March 2016).
              • A. Kors, J. P. Reithmaier and M. Benyoucef, “InP-based single QDs and nanocavities for quantum communication at telecom wavelengths”, German MBE workshop, München, Germany (October 2016).
              • G. Eisenstein, J. P. Reithmaier, "Coherent Control in Room Termperature InP Quantum Dot Gain Media, IEEE Photonics Conf. Waikoloa Village, Hawaii, USA (October 2016)