Nano Fab­ric­a­tion & Devices

Group Mem­bers

Group Leader Johann Peter Reithmaier
PhD Students Alireza Abdollahinia, Annette Becker
Technicians: Anna Rippien, Florian Schnabel, Kerstin Fuchs

 

 

Ob­ject­ives

The "Nano Fabrication & Devices" group deals with the development of novel fabrication processes on the basis of high-resolution lithography (e.g., electron beam lithography) and dry etching techniques for the  realization of semiconductor nano structures. Those techniques are used for the fabrication of optoelectronic devices, such as semiconductor lasers, amplifiers, optical switches, optoelectronic integrated circuits (OEICs), and more.

 

In addition, the group deals with the characterization of fabricated structures and devices. Special tools were constructed for the characterization of novel devices (e.g., fiber based linewidth measurement set-up, high-frequency set-up for small signal modulation, set-up for chirp measurement, and more). Also standard measurement tools are used for the basic characterization of lasers in pulsed and continous wave mode.

Pro­jects

Lit­er­at­ure

Publications

  • A. Becker, M. Bjelica, V. Sichkovskyi, A. Rippien, F. Schnabel, P. Baum, B. Witzigmann, J.P. Reithmaier, "InP-based narrow-linewidth widely tunable QD-DFB lasers", VDE-ITG meeting, Leipzig, Germany (May 2015) (pdf-File)

Overview Talks

  • J. P. Reithmaier, G. Eisenstein, A. DeRossi, S. Combrié, "Power Saving in Communication Applications by Nano-Structured Optoelectronic Components", Technion / TU Berlin Green Photonic Symposium, Berlin (invited, March 2015) (pptx-File, 25 MB)
  • J.P. Reithmaier, "Nanostructured Materials for Optoelectronic Devices: Current Developments and Future Challenges", Int. Symp. on Advances in "Quantum Materials, Quantum Physics and Nanophotonics", Würzburg, Germany (invited, April 2015) (pptx-File, 93 MB)
  • J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, V. Sichkovskyi, A. Becker, A. Rippien, F. Schnabel, B. Bjelica, B. Witzigmann, O. Eyal, G. Eisenstein, "The impact of low-dimensional gain material on emission linewidth and modulation speed in semiconductor lasers", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (invited talk, January 2016) (pptx-File, 8 MB)

Pic­ture gal­lery

High-resolution electron beam lithography system (Raith e-line)
High-resolution electron beam lithography system (Raith e-line)
ICP-RIE dry etching system for III-V semiconductor materials (Oxford 100)
ICP-RIE dry etching system for III-V semiconductor materials (Oxford 100)
Nano cavity positioned at the location of a quantum dot (in cooperation with Thales)
Nano cavity positioned at the location of a quantum dot (in cooperation with Thales)
Optical switch on the basis of coupled nano cavities (in cooperation with Thales)
Optical switch on the basis of coupled nano cavities (in cooperation with Thales)
SEM views of ridge waveguide lasers with lateral feedback grating. The cross-cut was realized by a focussed ion beam system (dual-beam FIB).
SEM views of ridge waveguide lasers with lateral feedback grating. The cross-cut was realized by a focussed ion beam system (dual-beam FIB).
Monolithically integrated wavelength tunable ultra-narrow line width laser chip based on quantum dot material.
Monolithically integrated wavelength tunable ultra-narrow line width laser chip based on quantum dot material.
Emission spectra of laser array wavelength tuned by grating period and heat sink temperature.
Emission spectra of laser array wavelength tuned by grating period and heat sink temperature.
Dependence of line width on the drive current of a quantum dot DFB laser.
Dependence of line width on the drive current of a quantum dot DFB laser.
Temperature dependent llght output characteristics of quantum dot ridge waveguide laser at different heatsink temperatures (pulsed mode).
Temperature dependent llght output characteristics of quantum dot ridge waveguide laser at different heatsink temperatures (pulsed mode).
Current-voltage and current-light characteristics of a QD ridge waveguide laser. The Inset shows a laser chip mounted to a ceramic signal transducer and HF-Probe (bandwidth: 50 GHz).
Current-voltage and current-light characteristics of a QD ridge waveguide laser. The Inset shows a laser chip mounted to a ceramic signal transducer and HF-Probe (bandwidth: 50 GHz).
Eye diagrams of 338 µm long QD laser operated at different temperatures and at a modulation speed of 25 GBit/s (direct modulation) (in cooperation with Technion, Israel).
Eye diagrams of 338 µm long QD laser operated at different temperatures and at a modulation speed of 25 GBit/s (direct modulation) (in cooperation with Technion, Israel).