|Group Leader||Mohamed Benyoucef|
|PhD Students||Miriam Gerstel, Muhammad Shaharukh, Ranbir Kaur, Andrei Kors, Patrick Krawiec, Matusala Yacob, Muhammad Usman|
|Master- & Bachelorstudents||Birk Fritsch, Lucas Rickert, Adnan Sayyed, Andreas Körner|
The research group focuses on the development of novel and advanced quantum architectures fabricated on Si, GaAs, (flat and pre-patterned) and InP substrates using molecular beam epitaxy and investigated their specific aspects of quantum optics. The first is considered to be as one of the key technologies combining the best of both materials leading to a highly versatile hybrid photonics platform which opens the way to large scale photonic integration; this could allow a direct combination of photonics and electronics on the same chip. The later could allow the implementation of efficient single-photon sources for long-distance quantum information.
The emphasis is on the fabrication (growth and processing) and studies the fundamental structural and quantum optical properties of the single quantum nano-architectures. Integration of III-V semiconductor light sources with silicon, fabrication and characterization of microcavities (e.g., photonic crystal) in combination with integrated quantum dots and processing of nanostructured surfaces for optical devices.
We are always interested in motivated and ambitious students, who are eager to embark on a challenging project with us (for Bachelor, Master and PhD level). Do not hesitate to contact me (email@example.com). You are also very welcome to bring your own ideas and I will be happy to discuss it with you.
PostDoc and PhD positions:
In the framework of a BMBF project, a PhD position is available and to be offered to highly motivated student who intends to enhance her/his scientist carrier in the field of semiconductor quantum optics. She/he should have a high interest in basic experimental research and like working in an interdisciplinary environment. The research will be carried out in the Nano Optics group at the Institute of Nanostructure Technologies and Analytics, INA. The focus of the project is to grow, process (in clean room), characterize, and embed in resonators and pin-diode low density InP- based QDs. The final goal is to achieve high quality single QDs emitting around 1.55 µm for quantum information applications. The work will be performed in close collaboration with other project partners. For more information contact us (firstname.lastname@example.org).
In the framework of a LOEWE project, we inivite strongly motivated people to apply for research assistant positions (two PhD students and one PostDoc) to join their Nano Optics Group led by Priv.-Doz. Dr. M. Benyoucef as part of a new interdisciplinary project on Scalable Molecular Quantum Bits (SMolBits).
See also the announcement for open position at tp.ina-kassel.de/index.php/open.html.
- Epitaxy growth of semiconductor nanostructures on different substrates using MBE-system
- Development of single-photon sources at telecom wavelengths for long-distance quantum communication
- Development of telecom quantum dot emission for spin storage
- Integration of single InA/GaAs core-shell quantum dots in silicon
- Processing of nanostructured surfaces for the realization of deterministic optical devices
- Fabrication and investigation of microcavity structures (e.g., pillar cavities, photonic crystals)
- Studies the structural properties of self-assembled quantum dots
- Studies light-matter interaction at the nanoscale of solid-state quantum systems
InP-based quantum dots:
- A. Kors, J. P. Reithmaier, M. Benyoucef, "Telecom wavelength single quantum dots with very small excitonic fine-structure splitting", Appl. Phys. Lett. 112, 172102 (2018)
- S.Gordon, M. Yacob, J. P. Reithmaier, M. Benyoucef, A. Zrenner, “Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom-band at 1.5 μm”, Appl. Phys. B(2016), DOI 10.1007/s00340-015-6279-6
- V. V. Belykh, A. Greilich, D. R. Yakovlev, M. Yacob, J. P. Reithmaier, M. Benyoucef, and M. Bayer, “Electron and hole g- factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths”, Phys. Rev. B 92, 165307 (2015)
- M. Yacob, J.P. Reithmaier and M. Benyoucef, "Low-density InP-based quantum dots emitting around the 1.5 µm telecom wavelength range", Appl. Phys. Lett. 104, 022113 (2014)
- M. Benyoucef, M. Yacob, J.P. Reithmaier, J. Kettler, P. Michler, "Telecom-wavelength (1.5 µm) single-photon emission from InP-based quantum dots", Appl. Phys. Lett. 103, 162101 (2013)
InP-based photonic crystal microcavities:
- A. Kors, K. Fucks, M. Yacob, J. P. Reithmaier and M. Benyoucef, “Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities", Appl. Phys. Lett.110, 031101 (2017)
Silicon-based quantum dots
- M. Benyoucef, T. Alzoubi, J.P. Reithmaier, M. Wu, A. Trampert, "Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon", Phys. Stat. Sol. A 211, 817 (2014)
- M. Benyoucef, M. Usman, J.P. Reithmaier, "Bright light emissions with narrow spectral linewidth from single InAs/GaAs quantum dots directly grown on silicon substrates", Appl. Phys. Lett.102, 132101 (2013)
- M. Benyoucef, J.P. Reithmaier, "Direct growth of III-V quantum dots on silicon substrates: structural and optical properties", Semicond. Sci. Technol. 28, 094004 (2013) (invited)
- M. Benyoucef, H-S. Lee, J. Gabel, T. W. Kim, H. L. Park, A. Rastelli and O. G. Schmidt, "Wavelength tunable triggered single-photon source from a single CdTe quantum dot on silicon substrate", Nano Letters 9, 304 (2009)
GaAs-based quantum dots
- M. Benyoucef, V. Zuerbig, J.P. Reithmaier, T. Kroh, A.W. Schnell, T. Aichele, O. Benson, "Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrates temperature", Nanoscale Research Letters 7, 493 (2012)
- M. Benyoucef, J.-B. Shim, J. Wiersig, O.G.Schmidt, ''Quality-factor enhancement of supermodes in coupled microdisks", Opt. Lett. 36, 1317 (2011)
- M. Pfeiffer, K. Lindfors, C. Wolpert, P. Atkinson, M. Benyoucef, A. Rastelli, O. G. Schmidt, H. Giessen, M. Lippitz, "Enhancing the optical excitation efficiency of a single self-assembled quantum dot with a plasmonic nanoantenna", Nano Letters 10, 4555 (2010)
- F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Křápek, Y. H. Chen, M. Benyoucef, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, O. G. Schmidt, “Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress”, Phys. Rev. Lett. 104, 067405 (2010)
- M. Benyoucef, L. Wang, A. Rastelli, O. G. Schmidt, "Toward quantum interference of photons from independent quantum dots", Appl. Phys. Lett. 95, 261908 (2009)
Site-controlled quantum dots on pre-patterned GaAs and silicon substrates
- M. Usman, J. P. Reithmaier, and M. Benyoucef, “Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates” Phys. Stat. Sol. A 212, 443 (2015)
- M. Benyoucef, M. Usman, T. Al-Zoubi, J.P. Reithmaier, "Pre-patterned silicon substrates for the growth of III-V nanostructures", Phys. Stat. Sol. A 209, 2402 (2012) (invited)
- P. Atkinson, S. Kiravittaya, M. Benyoucef, A. Rastelli and O.G. Schmidt, "Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates", Appl. Phys Lett. 93, 101908 (2008)