Equip­ment

Clean­room Equip­ment

On this page you find an overview of all machines which are available at INA. If there are questions please do not hesitate to contact us.

Litho­graphy

Zeiss NVision 40 High End Cross Beam

  • Electron column: high resolution (1,3 nm) field emission
  • Ion column: high resolution (4 nm), suitable for deposition (local microdeposition) and etching
[Translate to English:] Foto: Zeiss NVision 40 High End Cross Beam

Karl Süss MA6 Maskaligner

  • NanoImprint with SCIL Tooling for hybride Stamps
  • up to 6“-substrates, up to 7“-masks

Karl Süss MA4 Maskaligner

  • up to 4“-substrates, up to 7“-masks
  • Resolution: standard 800 nm, optional up to 300 nm
[Translate to English:] Foto: Karl Süss MA4 Maskaligner

EVG Al-4 Maskaligner

  • up to 4“-substrates, up to 5“-masks
[Translate to English:] Foto: EVG Al-4 Maskaligner

Raith eLine Electron Beam Lithography

  • High resolution (20 nm and below)
  • 100 x 100 mm laser interferometer table
  • Positioning accuracy 2 nm in x- and y-direction
[Translate to English:] Foto: Raith eLine Elektronenstrahlithografie

De­pos­ition

Roth & Rau Ionsys 1000 IBD
Ion Beam Deposition

  • Class 1 cleanroom section
  • Multilayer systems (DBR, VCSEL etc.)
  • In-situ process control
  • Material: metals (e.g. Al, Zr, Cr), oxides (e.g. ITO, TiO, SiO2), nitrides (e.g. SiN)
  • Process gases: Argon (Ar), Xenon (Xe), Oxigen (O2), Nitrogen (N2
  • Prozessgase: Argon (Ar), Xenon (Xe), Sauerstoff (O2), Stickstoff (N2)
[Translate to English:] Foto: Roth & Rau Ionsys 1000 IBD

Pfeiffer PLS 500 Evaporation System

  • Thermal or electron beam
  • Material: Titanium (Ti), Nickel (Ni), Chromium (Cr), Platinum (Pt), Aluminium (Al)
[Translate to English:] Foto: Pfeiffer PLS 500 Aufdampfanlage

Balzers BAK 600 Evaporation System

  • Thermal or electron beam
  • Process gas: Argon (Ar)
  • Material: Nickel (Ni), Titanium (Ti), Platinum (Pt), Gold (Au), Germanium (Ge), Chromium (Cr)
[Translate to English:] Foto: Balzers BAK 600 Aufdampfanlage

Phönix Evaporation System (self made)

  • Thermal
  • Material: Zinc (Zn), Gold (Au)
[Translate to English:] Foto: Phönix Aufdampfanlage

Oxford Plasmalab 80 PECVD
Plasma Enhanced Chemical Vapour Deposition

  • Process gases: Silan (SiH4), Hydrogen (H2), Ammonia (NH3), Nitrous oxide (N2O)
  • Material: Silicon Nitride (SiN), Silicon Oxide (SiO), Silicon (Si)
[Translate to English:] Foto: Oxford Plasmalab 80 PECVD

Zeiss NVision 40 High End Cross Beam

  • Electron column: high resolution (1,3 nm) field emission
  • Ion column: high resolution (4 nm), suitable for deposition (local microdeposition) and etching
[Translate to English:] Foto: Zeiss NVision 40 High End Cross Beam

Dry Etch­ing

Castor and Pollux RIE 
Reactive Ion Etching
Parallel Plate Reactor

  • Process gases: Argon (Ar), Trifluoromethane (CHF3), Sulfur hexafluoride (SF6), Oxygen (O2)
  • Material: Silicon Nitride (SiN), Silicon Oxide (SiO)
[Translate to English:] Foto: Castor und Pollux RIE

(Kopie 16)

Oxford Plasmalab 80 Plus RIE
Reactive Ion Etching
Parallel Plate Reactor

  • Process gases: Hydrogen (H2), Methan (CH4)
  • Material: Indium (In), Phosphorus (P), Gallium (Ga), Arsenic (As) compound semiconductors (e.g. InP)
[Translate to English:] Foto: Oxford Plasmalab 80 Plus RIE

2 Oxford Plasmalab 100 ICP-RIE
Inductive Coupled Plasma - Reactive Ion Etching

  • ICP 1: for deep etching of silicon with flourine-donators (Bosch-process)
  • ICP2: for etching of semiconductor materials (e.g. GaAs) with chlorine-donators
[Translate to English:] Foto: Oxford Plasmalab 100 ICP-RIE

TePla 200-G Oxygen Asher

  • Etching of photo resist and organic residues
  • Process gas: Oxygen (O2)
[Translate to English:] Foto: TePla 200-G Plasmaverascher

diener electronic NANO Oxygen Asher

  • Etching of photo resist and organic residues
  • Active Cooling, Optical Endpoint Detection
  • Process gas: Oxygen (O2), Argon (Ar)
  • Power: 600 W
[Translate to English:] Foto: diener electronic NANO Plasmaverascher

Fur­ther Equip­ment

Bal-Tec CPD 030 Critical Point Dryer

  • Process gas: Carbon Dioxide (CO2)
[Translate to English:] Foto: Bal-Tec CPD 030 Kritisch-Punkt-Trockner

Xerion RTA
Rapid Thermal Annealing

  • Process gas: Argon (Ar)
  • Temperatures up to 400°C
[Translate to English:] Foto: Xerion RTA

Ana­lyt­ics

Zeiss NVision 40 High End Cross Beam

  • Electron column: high resolution (1,3 nm) field emission
  • Ion column: high resolution (4 nm), suitable for deposition (local microdeposition) and etching
[Translate to English:] Foto: Zeiss NVision 40 High End Cross Beam

Zygo NewView 5000 White Light Interferometer

  • Vertical Resolution up to 0.1nm
  • Objectives: 5x Michelson, 50x Mirau
  • xy motordesk for stitching
  • Extended vertical scan length up to 20mm
[Translate to English:] Foto: Zygo 5000 Weißlichtinterferometer

Leica DMR Microskope

  • up to 1000x Magnification
  • Contrast method: bright field, dark field, differential interference contrast
  • Impinging light and transmitted light
[Translate to English:] Foto: Leica DMR Mikroskop

SENTECH SENpro Spectroscopic Ellipsometer

  • Monitoring of film thickness
  • Wavelength range: 350 nm - 1050 nm
[Translate to English:] Foto: SENTECH SENpro Ellipsometer

Plasmos SD-2100 Ellipsometer

  • Monitoring of film thickness
[Translate to English:] Foto: Plasmos SD-2100 Ellipsometer

Ambios Technology Oberflächenprofilometer XP-100

  • 3 nm resolution
  • 0,03 - 10 mg stylus force
  • 1,2 mm max. masurement range in z-direction
  • analysis of step hights , layer ticknesses, roughness, ripples, thin layer stress
[Translate to English:] Foto: Ambios Technology Oberflächenprofilometer XP-100

Sloan Dektak IIA Profilometer

  • 20 nm resolution
[Translate to English:] Foto: Sloan Dektak IIA Profilometer

Rohde & Schwarz Spectrum Analyzer FSB

  • Band width: 9 kHz-30 GHz
[Translate to English:] Foto: Rohde & Schwarz Spektrumanalysator FSB

Agilent 86142 B Optical Spectrum Analyzer 

  • Band width: 600-1700 nm
[Translate to English:] Foto: Agilent 86142 B Optischer Spektrumanalysator