Benyoucef Pub­lic­a­tions

Se­lec­ted pub­lic­a­tions

  • A. Musiał, M. Mikulicz,. Mrowinski, A. Zielinska, P. Sitarek, P. Wyborski, M. Kuniej, J. P. Reithmaier, G. Sek, and M. Benyoucef, InP-based single-photon sources operating at telecom C-band with increased extraction efficiency, Appl. Phys. Lett. 118, 221101 (2021)
  • W. Rudno-Rudzinski, M. Burakowski, J. P. Reithmaier, A. Musiał  and M. Benyoucef, Magneto-Optical Characterization of Trions in Symmetric InP-Based Quantum Dots for Quantum Communication Applications, Materials, 14, 942 (2021)
  • P. Podemski, M. Gawelczyk, P. Wyborski, H. Salamon, M. Burakowski, A. Musiał, J. P. Reithmaier, M. Benyoucef, and G. Sek, Spin memory effect in charged single telecom quantum dots, Opt. Express 29 34024 (2021)
  • I. Koehne, M. Gerstel, C. Bruhn, J. P. Reithmaier, M. Benyoucef, Rudolf Pietschnig, Azido-Functionalized Aromatic Phosphonate Esters in R POSS-Cage-Supported Lanthanide Ion (Ln = La, Nd, Dy, Er) Coordination, Inorg Chem.,60, 5297 (2021)
  • A. Musiał, P. Holewa, P. Wyborski, M. Syperek, A. Kors, J. P. Reithmaier, G. Sęk and M. Benyoucef
    High-purity telecom wavelength triggered single-photon emission from symmetric single InAs/InP quantum dots
    Adv. Quantum Technol. 2,1900082 (2020)
  • M. Benyoucef (Lead Guest Editor), A. Bennett, S. Götzinger, and C.-Y. Lu
    Photonic Quantum Technologies
    Adv. Quantum Technol. 2, 2000007 (2020) 
  • L. Rickert, B. Fritsch, A. Kors, J. P. Reithmaier and M. Benyoucef
    Mode properties of InP-based high Q/V L4/3 photonic crystal cavities for telecom wavelengths
    Nanotechnology 31, 315703 (2020)
  • I. Koehne, A. Lik, M. Gerstel, C. Bruhn, J. P. Reithmaier, M. Benyoucef and R. Pietschnig
    Functionalised phosphonate ester supported lanthanide (Ln = La, Nd, Dy, Er) complexes”
    Dalton Trans. 49, 16683 (2020)
  • P. Holewa, M. Gawełczyk, A. Maryński, P. Wyborski, J.P. Reithmaier, G. Sęk, M. Benyoucef, and M. Syperek
    Optical and Electronic Properties of Symmetric In As / ( In , Al , Ga ) As / In P Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters
    Phys. Rev. Applied 14, 064054 (2020) 
  • A. V. Mikhailov, V. V. Belykh, D. R. Yakovlev, P. S. Grigoryev, J. P. Reithmaier, M. Benyoucef, and M. Bayer
    Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths
    Phys. Rev. B 98, 205306 (2018)
  • A. Kors, J. P. Reithmaier and M. Benyoucef
    Telecom wavelength single quantum dots with very small fine-structure splitting
    Appl. Phys. Lett. 112, 172102 (2018)
  • C. Carmesin, M. Schowalter, M. Lorke, D. Mourad, T. Grieb, K. Müller-Caspary, J. P. Reithmaier, M. Benyoucef, A. Rosenauer, F. Jahnke  
    Interplay of morphology and optical properties of InAlGaAs quantum dots emitting at telecom wavelength
    Phys. Rev. B 96, 235309 (2017)
  • A. Kors, K. Fucks, M. Yacob, J. P. Reithmaier and M. Benyoucef
    Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities
    Appl. Phys. Lett.110, 031101 (2017)
  • V. V. Belykh, A. Greilich, D. R. Yakovlev, M. Yacob, J. P. Reithmaier, M. Benyoucef, and M. Bayer
    Electron and hole g factor anisotropy in infrared-emitting InAs/InAlGaAs/InP self-assembled quantum dots
    Phys. Rev. B 93, 125302 (2016)
  • S. Gordon, M. Yacob, J. P. Reithmaier, M. Benyoucef,·A. Zrenner
    Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom-band at 1.5 μm
    Appl. Phys. B, 122, article 37, pp. 1-7 (2016)
  • M. Yacob, J. P. Reithmaier, and M. Benyoucef
    Low-density InP-based quantum dots emitting around 1.5 µm telecom wavelength range
    Appl. Phys. Lett. 104, 022113 (2014)
  • M. Benyoucef and J P Reithmaier
    Direct growth of III–V quantum dots on silicon substrates: structural and optical properties, invited review article: III-V on silicon devices special issue of Semiconductor Science and Technology
    Selected by the journal’s Editorial Board as a Highlight of 2013. 
    Semicond. Sci. Technol. 28, 094004 (2013).
  • M. Benyoucef, M. Yacob, J.P. Reithmaier, J. Kettler, P. Michler 
    Telecom-wavelength (1.5 µm) single-photon emission from InP-based quantum dots
    Appl. Phys. Lett. 103, 162101 (2013)
  • M. Benyoucef, M. Usman, J.P. Reithmaier
    Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrate
    Appl. Phys. Lett. 102, 132101 (2013)
  • M. Benyoucef, V. Zuerbig, J.P. Reithmaier, T. Kroh, A.W.Schnell, T. Aichele, O. Benson
    Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperatures
    Nanoscale Research Letters 7, p. 493 (2012)
  • M. Benyoucef, J.-B. Shim, J. Wiersig, O.G. Schmidt
    Quality-factor enhancement of supermodes in coupled microdisks
    Opt. Lett. 36, 1317 (2011).
  • J. Potfajova, B. Schmidt, M. Helm, T. Gemming, M. Benyoucef, A. Rastelli, O. G. Schmidt
    Microcavity enhanced silicon light emitting pn-diode
    Appl. Phys. Lett. 96, 151113 (2010).
  • M. Pfeiffer, K. Lindfors, C. Wolpert, P. Atkinson, M. Benyoucef, A. Rastelli, O. G. Schmidt, H. Giessen, M. Lippitz
    Enhancing the optical excitation efficiency of a single self-assembled quantum dot with a plasmonic nanoantenna
    Nano Lett. 10, 4555 (2010).
  • F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Křápek, Y. H. Chen, M. Benyoucef, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, O. G. Schmidt
    Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress
    Phys. Rev. Lett. 104, 067405 (2010).
  • M. Benyoucef, L. Wang, A. Rastelli, O. G. Schmidt
    Toward quantum interference of photons from independent quantum dots
    Appl. Phys. Lett. 95, 261908 (2009).
  • M. Benyoucef, H-S. Lee, J. Gabel, T. W. Kim, H. L. Park, A. Rastelli and O. G. Schmidt
    Wavelength tunable triggered single-photon source from a single CdTe quantum dot on silicon substrate
    Nano Letters 9, 304-307 (2009).
  • P. Atkinson, S. Kiravittaya, M. Benyoucef, A. Rastelli and O.G. Schmidt
    Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates
    Appl. Phys Lett. 93, 101908 (2008).
  • S. Mendach, S. Kiravittaya, M. Benyoucef, A. Rastelli, R. Songmuang, and O.G. Schmidt
    Bidirectional wavelength tuning of semiconductor quantum dots as artificial atoms in an optical resonator
    Phys. Rev. B 78, 035317 (2008).
  • M. Benyoucef, S. Kiravittaya, Y.F. Mei, A. Rastelli and O. G. Schmidt
    Strongly coupled semiconductor microcavities: A route to couple artificial atoms over micrometric distances
    Phys. Rev. B 77, 035108 (2008).
  • S. Kiravittaya, M. Benyoucef, R. Zapf-Gottwick, A. Rastelli, and O. G. Schmidt
    Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting
    Appl. Phys Lett. 89, 233102 (2006).
  • M. Benyoucef, A. Rastelli, S. M. Ulrich, P. Michler, and O. G. Schmidt
    Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots,
    Nanoscale Research Letters 1,172 (2006).
  • M. Schwab, H. Kurtze, T. Auer, T. Berstermann, M. Bayer, .J. Wiersig, N. Baer, C. Gies, F. Jahnke, J. P. Reithmaier, A. Forchel, M. Benyoucef and P. Michler
    Radiative emission dynamics of quantum dots in a single cavity micropillar
    Phys. Rev. B 74, 045323 (2006).
  • S. Mendach, R. Songmuang, S. Kiravittaya, A. Rastelli, M. Benyoucef, and O. G. Schmidt
    Light emission and wave guiding of quantum dots in a tube
    Appl. Phys. Lett. 88, 111120 (2006).
  • S. M. Ulrich, M. Benyoucef, P. Michler, N. Baer, P. Gartner, F. Jahnke, M. Schwab, H. Kurtze, M. Bayer, S. Fafard, and Z. Wasilewski
    Correlated Photon-Pair Emission from a Charged Single Quantum Dot
    Phys. Rev. B 71, 235328 (2005).
  • M. Benyoucef, S. M. Ulrich, P. Michler, J. Wiersig, F. Jahnke, and A. Forchel
    Correlated photon pairs from single InGaAs/GaAs quantum dot in pillar microcavities
    J. Appl. Phys. 97, 023101 (2005).
  • M. Benyoucef, S. M. Ulrich, P. Michler, J. Wiersig, F. Jahnke, and A. Forchel
    Enhanced correlated photon pair emission from a pillar microcavity
    New J. Phys. 6,91(2004).
  • G. Martinez-Criado, M. Kuball, M. Benyoucef, A. Sarua, E. Frayssinet, B. Beaumont, P. Gibart, C. R. Miskys, and M. Stutzmann
    Free-standing GaN grown on epitaxial lateral overgrown GaN substrates
    J. Cryst. Growth 255, 277 (2003).
  • M. Benyoucef, M. Kuball, B. Beaumont, and P. Gibart
    Raman mapping, photoluminescence investigations and finite element calculations of epitaxial lateral overgrown (ELO) GaN grown on silicon substrate
    Appl. Phys Lett. 80, 2275 (2002).
  • M. Benyoucef, M. Kuball, B. Beaumont, and P. Gibart 
    Finite element analysis of epitaxial lateral overgrown (ELO) GaN: voids at the coalescence boundary
    Appl. Phys. Lett. 79, 4127 (2001).
  • C. Marinelli, M. Bordovsky, L. J. Sargent, M. Gioannini, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, M. Benyoucef, M. Kuball, G. Hasnain, T. Takeuchi, and R. P. Schneider
    Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes
    Appl. Phys. Lett. 79,4076 (2001).
  • M. Benyoucef, M. Kuball, J.M. Sun, G.Z. Zhong, and X.W. Fan
    Raman scattering and photoluminescence studies on Si/SiO2 superlattices
    J. Appl. Phys. 89, 7903 (2001).
  • M. Kuball, M. Benyoucef, F.H. Morrissey, and C.T. Foxon
    Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping
    MRS Internet J. Nitride Semicond. Res. 5S1, W12.3 (2000).

More publications can be found here