Benyoucef Publications

Selected publications

A. Musiał, M. Mikulicz,. Mrowinski, A. Zielinska, P. Sitarek, P. Wyborski, M. Kuniej, J. P. Reithmaier, G. Sek, and M. Benyoucef, InP-based single-photon sources operating at telecom C-band with increased extraction efficiency, Appl. Phys. Lett. 118, 221101 (2021)
W. Rudno-Rudzinski, M. Burakowski, J. P. Reithmaier, A. Musiał and M. Benyoucef, Magneto-Optical Characterization of Trions in Symmetric InP-Based Quantum Dots for Quantum Communication Applications, Materials, 14, 942 (2021)
P. Podemski, M. Gawelczyk, P. Wyborski, H. Salamon, M. Burakowski, A. Musiał, J. P. Reithmaier, M. Benyoucef, and G. Sek, Spin memory effect in charged single telecom quantum dots, Opt. Express 29 34024 (2021)
I. Koehne, M. Gerstel, C. Bruhn, J. P. Reithmaier, M. Benyoucef, Rudolf Pietschnig, Azido-Functionalized Aromatic Phosphonate Esters in R POSS-Cage-Supported Lanthanide Ion (Ln = La, Nd, Dy, Er) Coordination, Inorg Chem.,60, 5297 (2021)
A. Musiał, P. Holewa, P. Wyborski, M. Syperek, A. Kors, J. P. Reithmaier, G. Sęk and M. Benyoucef
High-purity telecom wavelength triggered single-photon emission from symmetric single InAs/InP quantum dots
Adv. Quantum Technol. 2,1900082 (2020)
M. Benyoucef (Lead Guest Editor), A. Bennett, S. Götzinger, and C.-Y. Lu
Photonic Quantum Technologies
Adv. Quantum Technol. 2, 2000007 (2020)
L. Rickert, B. Fritsch, A. Kors, J. P. Reithmaier and M. Benyoucef
Mode properties of InP-based high Q/V L4/3 photonic crystal cavities for telecom wavelengths
Nanotechnology 31, 315703 (2020)
I. Koehne, A. Lik, M. Gerstel, C. Bruhn, J. P. Reithmaier, M. Benyoucef and R. Pietschnig
Functionalised phosphonate ester supported lanthanide (Ln = La, Nd, Dy, Er) complexes”
Dalton Trans. 49, 16683 (2020)
P. Holewa, M. Gawełczyk, A. Maryński, P. Wyborski, J.P. Reithmaier, G. Sęk, M. Benyoucef, and M. Syperek
Optical and Electronic Properties of Symmetric In As / ( In , Al , Ga ) As / In P Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad-Range Single-Photon Telecom Emitters
Phys. Rev. Applied 14, 064054 (2020)
A. V. Mikhailov, V. V. Belykh, D. R. Yakovlev, P. S. Grigoryev, J. P. Reithmaier, M. Benyoucef, and M. Bayer
Electron and hole spin relaxation in InP-based self-assembled quantum dots emitting at telecom wavelengths
Phys. Rev. B 98, 205306 (2018)
A. Kors, J. P. Reithmaier and M. Benyoucef
Telecom wavelength single quantum dots with very small fine-structure splitting
Appl. Phys. Lett. 112, 172102 (2018)
C. Carmesin, M. Schowalter, M. Lorke, D. Mourad, T. Grieb, K. Müller-Caspary, J. P. Reithmaier, M. Benyoucef, A. Rosenauer, F. Jahnke
Interplay of morphology and optical properties of InAlGaAs quantum dots emitting at telecom wavelength
Phys. Rev. B 96, 235309 (2017)
A. Kors, K. Fucks, M. Yacob, J. P. Reithmaier and M. Benyoucef
Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities
Appl. Phys. Lett.110, 031101 (2017)
V. V. Belykh, A. Greilich, D. R. Yakovlev, M. Yacob, J. P. Reithmaier, M. Benyoucef, and M. Bayer
Electron and hole g factor anisotropy in infrared-emitting InAs/InAlGaAs/InP self-assembled quantum dots
Phys. Rev. B 93, 125302 (2016)
S. Gordon, M. Yacob, J. P. Reithmaier, M. Benyoucef,·A. Zrenner
Coherent photocurrent spectroscopy of single InP-based quantum dots in the telecom-band at 1.5 μm
Appl. Phys. B, 122, article 37, pp. 1-7 (2016)
M. Yacob, J. P. Reithmaier, and M. Benyoucef
Low-density InP-based quantum dots emitting around 1.5 µm telecom wavelength range
Appl. Phys. Lett. 104, 022113 (2014)
M. Benyoucef and J P Reithmaier
Direct growth of III–V quantum dots on silicon substrates: structural and optical properties, invited review article: III-V on silicon devices special issue of Semiconductor Science and Technology
Selected by the journal’s Editorial Board as a Highlight of 2013.
Semicond. Sci. Technol. 28, 094004 (2013).
M. Benyoucef, M. Yacob, J.P. Reithmaier, J. Kettler, P. Michler
Telecom-wavelength (1.5 µm) single-photon emission from InP-based quantum dots
Appl. Phys. Lett. 103, 162101 (2013)

M. Benyoucef, M. Usman, J.P. Reithmaier
Bright light emissions with narrow spectral linewidths from single InAs/GaAs quantum dots directly grown on silicon substrate
Appl. Phys. Lett. 102, 132101 (2013)
M. Benyoucef, V. Zuerbig, J.P. Reithmaier, T. Kroh, A.W.Schnell, T. Aichele, O. Benson
Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperatures
Nanoscale Research Letters 7, p. 493 (2012)

M. Benyoucef, J.-B. Shim, J. Wiersig, O.G. Schmidt
Quality-factor enhancement of supermodes in coupled microdisks
Opt. Lett. 36, 1317 (2011).
J. Potfajova, B. Schmidt, M. Helm, T. Gemming, M. Benyoucef, A. Rastelli, O. G. Schmidt
Microcavity enhanced silicon light emitting pn-diode
Appl. Phys. Lett. 96, 151113 (2010).
M. Pfeiffer, K. Lindfors, C. Wolpert, P. Atkinson, M. Benyoucef, A. Rastelli, O. G. Schmidt, H. Giessen, M. Lippitz
Enhancing the optical excitation efficiency of a single self-assembled quantum dot with a plasmonic nanoantenna
Nano Lett. 10, 4555 (2010).
F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Křápek, Y. H. Chen, M. Benyoucef, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, O. G. Schmidt
Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxial stress
Phys. Rev. Lett. 104, 067405 (2010).
M. Benyoucef, L. Wang, A. Rastelli, O. G. Schmidt
Toward quantum interference of photons from independent quantum dots
Appl. Phys. Lett. 95, 261908 (2009).
M. Benyoucef, H-S. Lee, J. Gabel, T. W. Kim, H. L. Park, A. Rastelli and O. G. Schmidt
Wavelength tunable triggered single-photon source from a single CdTe quantum dot on silicon substrate
Nano Letters 9, 304-307 (2009).
P. Atkinson, S. Kiravittaya, M. Benyoucef, A. Rastelli and O.G. Schmidt
Site-controlled growth and luminescence of InAs quantum dots using in situ Ga-assisted deoxidation of patterned substrates
Appl. Phys Lett. 93, 101908 (2008).
S. Mendach, S. Kiravittaya, M. Benyoucef, A. Rastelli, R. Songmuang, and O.G. Schmidt
Bidirectional wavelength tuning of semiconductor quantum dots as artificial atoms in an optical resonator
Phys. Rev. B 78, 035317 (2008).
M. Benyoucef, S. Kiravittaya, Y.F. Mei, A. Rastelli and O. G. Schmidt
Strongly coupled semiconductor microcavities: A route to couple artificial atoms over micrometric distances
Phys. Rev. B 77, 035108 (2008).
S. Kiravittaya, M. Benyoucef, R. Zapf-Gottwick, A. Rastelli, and O. G. Schmidt
Ordered GaAs quantum dot arrays on GaAs(001): Single photon emission and fine structure splitting
Appl. Phys Lett. 89, 233102 (2006).
M. Benyoucef, A. Rastelli, S. M. Ulrich, P. Michler, and O. G. Schmidt
Temperature dependent optical properties of single, hierarchically self-assembled GaAs/AlGaAs quantum dots,
Nanoscale Research Letters 1,172 (2006).
M. Schwab, H. Kurtze, T. Auer, T. Berstermann, M. Bayer, .J. Wiersig, N. Baer, C. Gies, F. Jahnke, J. P. Reithmaier, A. Forchel, M. Benyoucef and P. Michler
Radiative emission dynamics of quantum dots in a single cavity micropillar,
Phys. Rev. B 74, 045323 (2006).
S. Mendach, R. Songmuang, S. Kiravittaya, A. Rastelli, M. Benyoucef, and O. G. Schmidt
Light emission and wave guiding of quantum dots in a tube
Appl. Phys. Lett. 88, 111120 (2006).
S. M. Ulrich, M. Benyoucef, P. Michler, N. Baer, P. Gartner, F. Jahnke, M. Schwab, H. Kurtze, M. Bayer, S. Fafard, and Z. Wasilewski
Correlated Photon-Pair Emission from a Charged Single Quantum Dot
Phys. Rev. B 71, 235328 (2005).
M. Benyoucef, S. M. Ulrich, P. Michler, J. Wiersig, F. Jahnke, and A. Forchel
Correlated photon pairs from single InGaAs/GaAs quantum dot in pillar microcavities
J. Appl. Phys. 97, 023101 (2005).
M. Benyoucef, S. M. Ulrich, P. Michler, J. Wiersig, F. Jahnke, and A. Forchel
Enhanced correlated photon pair emission from a pillar microcavity
New J. Phys. 6,91(2004).
G. Martinez-Criado, M. Kuball, M. Benyoucef, A. Sarua, E. Frayssinet, B. Beaumont, P. Gibart, C. R. Miskys, and M. Stutzmann
Free-standing GaN grown on epitaxial lateral overgrown GaN substrates
J. Cryst. Growth 255, 277 (2003).
M. Benyoucef, M. Kuball, B. Beaumont, and P. Gibart
Raman mapping, photoluminescence investigations and finite element calculations of epitaxial lateral overgrown (ELO) GaN grown on silicon substrate
Appl. Phys Lett. 80, 2275 (2002).
M. Benyoucef, M. Kuball, B. Beaumont, and P. Gibart
Finite element analysis of epitaxial lateral overgrown (ELO) GaN: voids at the coalescence boundary
Appl. Phys. Lett. 79, 4127 (2001).
C. Marinelli, M. Bordovsky, L. J. Sargent, M. Gioannini, J. M. Rorison, R. V. Penty, I. H. White, P. J. Heard, M. Benyoucef, M. Kuball, G. Hasnain, T. Takeuchi, and R. P. Schneider
Design and performance analysis of deep-etch air/nitride distributed Bragg reflector gratings for AlInGaN laser diodes
Appl. Phys. Lett. 79,4076 (2001).
M. Benyoucef, M. Kuball, J.M. Sun, G.Z. Zhong, and X.W. Fan
Raman scattering and photoluminescence studies on Si/SiO₂ superlattices
J. Appl. Phys. 89, 7903 (2001).
M. Kuball, M. Benyoucef, F.H. Morrissey, and C.T. Foxon
Focused ion beam etching of nanometer-size GaN/AlGaN device structures and their optical characterization by micro-photoluminescence/Raman mapping
MRS Internet J. Nitride Semicond. Res. 5S1, W12.3 (2000).

More publications can be found here.