The Power Electronics department is starting work on the “InnoPower-E” research project. The joint project aims to develop and analyze technological and system innovations for low-power PV and battery power converter technology.

In the subproject “Investigation of innovative high-current power converters taking into account novel GaAs semiconductor technologies,” the Power Electronics department will investigate novel semiconductor technologies for use in smaller PV and battery storage inverters.

In the sub-project, the University of Kassel will primarily develop and evaluate new technological approaches and solutions for power electronics in the addressed field of application. Answers to accompanying questions about possibilities for embedding components, new power module options, and the associated driver solutions are to be developed.

The potential advantages of semiconductors based on gallium arsenide (GaAs) will also be investigated and tested in practice with components from the project partner 3-5-Power. Diodes based on GaAs promise higher current carrying capacities with significantly reduced losses compared to known Si components. This can be particularly advantageous for the boost converters to be investigated with currents between 50A and 100A.

The project will run for 3 years and will receive funding of €729,461.53. The project is funded by the Federal Ministry for Economic Affairs and Energy under funding code 03EE1237D.

The Power Electronics department is starting work on the “InnoPower-E” research project. The joint project aims to develop and analyze technological and system innovations for low-power PV and battery power converter technology.

In the subproject “Investigation of innovative high-current power converters taking into account novel GaAs semiconductor technologies,” the Power Electronics department will investigate novel semiconductor technologies for use in smaller PV and battery storage inverters.

In the sub-project, the University of Kassel will primarily develop and evaluate new technological approaches and solutions for power electronics in the addressed field of application. Answers to accompanying questions about possibilities for embedding components, new power module options, and the associated driver solutions are to be developed.

The potential advantages of semiconductors based on gallium arsenide (GaAs) will also be investigated and tested in practice with components from the project partner 3-5-Power. Diodes based on GaAs promise higher current carrying capacities with significantly reduced losses compared to known Si components. This can be particularly advantageous for the boost converters to be investigated with currents between 50A and 100A.

The project will run for 3 years and will receive funding of €729,461.53. The project is funded by the Federal Ministry for Economic Affairs and Energy under funding code 03EE1237D.