Forschung

• Epitaktisches Wachstum von Nanostrukturen auf verschiedenen Substraten mittels MBE-Anlagen
• Entwicklung von Einzelphotonenquellen im Bereich der Telekommunikationswellenlängen
• Entwicklung von Quantenpunktemission im Telekombereich für die Spin-Speicherung
• Integration einzelner InAs/GaAs Kern-Schale Quantenpunkte in Silizium
• Realisierung von deterministischen optischen Elementen
• Herstellung und Untersuchung von Mikroresonator Strukturen (z.B. photonische Kristalle)
• Erforschung von 2D-Materialien
• Studien zu strukturellen Eigenschaften von selbstorganisierten Quantenpunkten
• Studien zu Licht-Materie-Wechselwirkungen auf Nanoskala von Festkörper Quantensystemen
• Spektroskopie an immobilisierten Molekülen und Integration in Photonik-Chip

• BMBF-Q.com
• BMBF-Q.Link.X
• BMBF-QR.X
• DFG-DeLiCom
• LOEWE- SMolBits

Literatur: 

• A. Musiał, M. Mikulicz,. Mrowinski, A. Zielinska, P. Sitarek, P. Wyborski, M. Kuniej, J. P. Reithmaier, G. Sek, and M. Benyoucef,
  InP-basedsingle-photon sources operating at telecom C-band with increased extraction efficiency,
  Appl. Phys. Lett.118, 221101 (2021).
• P. Holewa, A. Maryński, M. Gawełczyk, P. Wyborski, J. Andrzejewski, J. P. Reithmaier, G. Sęk, M. Benyoucef, and M. Syperek,
  Optical properties of InAs/InAlGaAs/InP(001) quantum dots grown by ripening process in molecular beam epitaxy,
  Phys. Rev. Applied14, 064054 (2020).
• A. Musiał, P. Holewa, P. Wyborski, M. Syperek, A. Kors, J. P. Reithmaier, G. Sęk and M. Benyoucef, 
  High-purity telecom wavelengthtriggered single-photon emission from symmetric single InAs/InP quantum dots,
  Adv. Quantum Technol.3 (2), 1900082 (2020).
• A. Kors, J. P. Reithmaier, M. Benyoucef, 
  Telecom wavelength single quantum dots with very small excitonic fine-structure splitting,
  Appl.Phys. Lett.112, 172102 (2018).
• S.Gordon, M. Yacob, J. P. Reithmaier, M. Benyoucef, A. Zrenner, 
  Coherent photocurrent spectroscopy of single InP-based quantum dots inthe telecom-band at 1.5 μm,
  Appl. Phys. B122, 37 (2016).
• V. V. Belykh, A. Greilich, D. R. Yakovlev, M. Yacob, J. P. Reithmaier, M. Benyoucef, and M. Bayer, 
  Electron and hole g- factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths,
  Phys. Rev. B 92, 165307 (2015).
• M. Yacob, J.P. Reithmaier and M. Benyoucef, 
  Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelengthrange,
  Appl. Phys. Lett. 104, 022113 (2014).
• M. Benyoucef, M. Yacob, J.P. Reithmaier, J. Kettler, P. Michler, 
  Telecom-wavelength (1.5 μm) single-photon emission from InP-basedquantum dots,
  Appl. Phys. Lett. 103, 162101 (2013).

Literatur: 

• L. Rickert, B. Fritsch, A. Kors, J. P. Reithmaier and M. Benyoucef, 
  Mode properties of InP-based high Q/V L4/3 photonic crystal cavities for telecom wavelengths,
  Nanotechnology31, 315703 (2020).
• L. Rickert, J. P. Reithmaier and M. Benyoucef,
  Telecom wavelengths from InP-based L3 photonic crystal cavities with optimized out-coupling properties,
  AIP Conference Proceedings 2241, 020004 (2020).
• A. Kors, K. Fucks, M. Yacob, J. P. Reithmaier and M. Benyoucef, 
  Telecom wavelength emitting single quantum dots coupled to InP-based photonic crystal microcavities,
  Appl. Phys. Lett. 110, 031101 (2017).

Literatur: 

• M. Benyoucef, T. Alzoubi, J.P. Reithmaier, M. Wu, A. Trampert, 
  Nanostructured hybrid material based on highly mismatched III-V nanocrystals fully embedded in silicon, 
  Phys. Stat. Sol. A 211, 817 (2014).
• M. Benyoucef, M. Usman, J.P. Reithmaier,
  Bright light emissions with narrow spectral linewidth from single InAs/GaAs quantum dots directly grown on silicon substrates, 
  Appl. Phys. Lett. 102, 132101 (2013).
• M. Benyoucef, J.P. Reithmaier,
  Direct growth of III-V quantum dots on silicon substrates: structural and optical properties, 
  Semicond. Sci. Technol. 28, 094004 (2013) (invited).
• M. Benyoucef, H-S. Lee, J. Gabel, T. W. Kim, H. L. Park, A. Rastelli and O. G. Schmidt,
  Wavelength tunable triggered single-photon source from a single CdTe quantum dot on silicon substrate, 
  Nano Letters 9, 304 (2009).

Literatur:

• M. Benyoucef, V. Zuerbig, J.P. Reithmaier, T. Kroh, A.W. Schnell, T. Aichele, O. Benson, 
  Single-photon emission from single InGaAs/GaAsquantum dots grown by droplet epitaxy at high substrates temperature,
  Nanoscale Research Letters 7, 493 (2012).
• M. Benyoucef, J.-B. Shim, J. Wiersig, O.G.Schmidt, 
  Quality-factor enhancement of supermodes in coupled microdisks,
  Opt. Lett. 36, 1317 (2011).
• M. Pfeiffer, K. Lindfors, C. Wolpert, P. Atkinson, M. Benyoucef, A. Rastelli, O. G. Schmidt, H. Giessen, M. Lippitz, 
  Enhancing the opticalexcitation efficiency of a single self-assembled quantum dot with a plasmonic nanoantenna,
  Nano Letters 10, 4555 (2010).
• F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Křápek, Y. H. Chen, M. Benyoucef, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, O. G.Schmidt, 
  Tuning the exciton binding energies in single self-assembled InGaAs/GaAs quantum dots by piezoelectric-induced biaxialstress,
  Phys. Rev. Lett. 104, 067405 (2010).
• M. Benyoucef, L. Wang, A. Rastelli, O. G. Schmidt, 
  Toward quantum interference of photons from independent quantum dots,
  Appl. Phys.Lett. 95, 261908 (2009).

Literatur:

• M. Usman, J. P. Reithmaier, and M. Benyoucef, 
  Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates,
  Phys.Stat. Sol. A 212, 443 (2015).
• M. Benyoucef, M. Usman, T. Al-Zoubi, J.P. Reithmaier, 
  Pre-patterned silicon substrates for the growth of III-V nanostructures,
  Phys. Stat.Sol. A 209, 2402 (2012) (invited).
• P. Atkinson, S. Kiravittaya, M. Benyoucef, A. Rastelli and O.G. Schmidt, 
  Site-controlled growth and luminescence of InAs quantum dotsusing in situ Ga-assisted deoxidation of patterned substrates,
  Appl. Phys Lett. 93, 101908 (2008).