2011

Der Zu­griff auf Ori­gi­nal­da­tei­en ist pass­wort­ge­schützt (nur für in­ter­ne Nut­zung)

Fach­zeit­schrif­ten

  • C. Gilfert, J.P. Reithmaier, "Semiconductor lasers for sensor applications", in "Nanotechnological Basis for advanced sensors", edited by prof. J.P. Reithmaier, Plamen Petkov, Wilhelm Kulisch, Cyril Popov, Nato ASI Series B, Springer, pp. 333-353 (2011)

Kon­fe­renz­bei­trä­ge

  • S. Afzal, F. Schnabel, W. Scholz, J.P. Reithmaier, G. Eisenstein, A. Capua, E. Shumakher, O. Parillaud, M. Krakowski, "1.55 µm directly modulated CCIG lasers fabricated by surface-defined lateral feedback gratings", Photonics West Conf., San Francisco, USA (January 2011)
  • G. Eisenstein, A. Capua, J.P. Reithmaier, "Dynamical processes in nanometric semiconductor lasers and amplifiers", Photonics West Conference, San-Francisco, USA (January 2011) (invited)
  • M. Dumitrescu, J. Telkkälä, J. Karinen, J. Viheriälä, A. Laakso, S. Afzal, J.P. Reithmaier, M. Kamp, P. Melanen, P. Uusimaa, P. Bardella, M. Vallone, I. Montrosset, O. Parillaud, D. Gready, G. Eisenstein, G. Sek, "Development of high-speed directly-modulated DFB and DBR lasers with surface gratings" Photonics West Conference, San-Francisco, USA (January 2011)
  • C. Gilfert, V. Ivanov, N. Oehl, M. Yacob, J.P. Reithmaier "1.55 µm lasers based on shape-engineered InAs/InAlGaAs/InP (100) quantum dots", Euro MBE Workshop (EMBE), L'Alpes d'Hues, France (March 2011)
  • J.P. Reithmaier, "Next generation of quantum dot devices based on tailored nanostructured materials", MGe-Nanoforum, Vienna, Austria (April 2011) (invited)
  • J.P. Reithmaier, "New quantum dot designs and formation processes for active optoelectronic devices", Villa Conference on Interactions among Nanostructures (VCIAN), Las Vegas, USA (April 2011) (invited)
  • M. Benyoucef, J.-B. Shim, J. Wiersig, O.G. Schmidt, "Quality-factor enhancement of optical modes mediated by strong coupling in micron-size semiconductor disks", PLMCN11, Berlin, Germany (April 2011)
  • V. Ivanov, C. Gilfert and J.P. Reithmaier "1.55 µm Quantenpunktmaterial mit erhöhter spektraler Verstärkung für Kommunikationslaser und optische Halbleiterverstärker (SOAs)", ITG-Fachtagung "Photonische Netze", Leipzig, Germany (May 2011)
  • J.P. Reithmaier, "High speed semiconductors lasers for tele- and datacom applications", Short Course, International Conference on InP and Related Materials, Berlin, Germany (May 2011) (invited)
  • M. Usman, T. Al-Zoubi, M. Benyoucef, J.P. Reithmaier, "Nanostructuring of silicon substrates for the growth of III/V quantum dots", 37th Int. Conf. on Micro and Nano Eng. (MNE 2011), Berlin, Germany (September 2011)
  • S. Afzal, F. Schnabel, W. Scholz, J.P. Reithmaier, M. Vallone, P. Bardella, I. Montrosset, "Trench width dependent deeply etched surface-defined InP gratings for low-cost high speed DFB/DBR lasers", 37th Int. Conf. on Micro and Nano Eng. (MNE 2011), Berlin, Germany (September 2011)
  • M. Benyoucef, J.P. Reithmaier, "Nano-material platforms for future optical communications", Shanghai Int. Nanotechnology Cooperation Symposium (SINCS 2011), Shanghai, China (October 2011) (invited)
  • C. Gilfert, V. Ivanov, N. Oehl, M. Yacob, D. Gready, G. Eisenstein, J.P. Reithmaier, "High-gain InP-based quantum dot lasers for telecommunication appliations", IEEE Photonics Society Meeting, Arlington, USA (October 2011)