2015
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Journal Papers
- M. Usman, J. P. Reithmaier, and M. Benyoucef, “Site-controlled growth of GaAs nanoislands on pre-patterned silicon substrates” Phys. Stat. Sol. A 212, 443-448 (2015) (pdf-Datei)
- M. Wu, A. Trampert, T. Al-Zoubi, M. Benyoucef, and J. P. Reithmaier, “Interface structure and strain state of InAs nano-clusters embedded in silicon”, Acta Mater., 90, 133-139 (2015) (pdf-Datei)
- O. Karni, A.K. Mishra, G. Eisenstein, J.P. Reithmaier, "Nonlinear pulse propagation in InAs/InP quantum-dot optical amplifiers: Rabi-oscillations in the presence of non-resonant nonlinearities", Phys. Rev. B 91, 115304 (2015) (pdf-Datei)
- P. Mrowinski, A. Musial, A. Marynski, M. Syperek, J. Misiewicz, A. Somers, J.P. Reithmaier, S. Höfling, G. Sek, “Magnetic field control of the neutral and charged exciton fine structure in single quantum dahses emitting at 1.55 µm”, Appl. Phys. Lett. 106, 053114 (2015) (pdf-Datei)
- G. Eisenstein, O. Karni, A.K. Mishra, A. Capua, Dr. Gready, V. Sichkovskyi, V. Ivanov, J.P. Reithmaier, "Breaktroughs in Photonics 2014: Time scale dependent nonlinear dynamics in InAs/InP quantum dot gain media: from high-speed modulation to coherent light- matter interactions", IEEE Photonics Journal 7, 0700407,(invited 2015) (pdf-Datei)
- S. Banyoudeh, J.P. Reithmaier, "High-density 1.55 µm InAs/InP(100) based quantum dots with reduced size inhomogeneity", J. Cryst. Growth 425, 299 (2015) (pdf-Datei)
- V. V. Belykh, A. Greilich, D. R. Yakovlev, M. Yacob, J. P. Reithmaier, M. Benyoucef, and M. Bayer, “Electron and hole g- factors in InAs/InAlGaAs self-assembled quantum dots emitting at telecom wavelengths”, Phys. Rev. B 92, 165307 (2015) (pdf-Datei)
Conference Contributions
- J.P. Reithmaier, V. Sichkovskyi, A. Becker, B. Bjelica, B. Witzigmann, D. Gready, G. Eisenstein, "InP based high-gain QD material for high-speed and narrow linewidth applications", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (invited, January 2015) (pptx-File, 5 MB)
- J. P. Reithmaier, G. Eisenstein, A. DeRossi, S. Combrié, "Power Saving in Communication Applications by Nano-Structured Optoelectronic Components", Technion / TU Berlin Green Photonic Symposium, Berlin (invited, March 2015) (pptx-File, 25 MB)
- J.P. Reithmaier, "Nanostructured Materials for Optoelectronic Devices: Current Developments and Future Challenges", Int. Symp. on Advances in "Quantum Materials, Quantum Physics and Nanophotonics", Würzburg, Germany (invited, April 2015) (pptx-File, 93 MB)
- J.P. Reithmaier, M. Benyoucef, "Challenges of epitaxial growth of III-V materials on Si platform for photonic applications", EMRS spring meeting, Lille, Frankreich (invited, May 2015) (pptx-File, 33 MB)
- G. Eisenstein, A. Capua, O. Karni, J.P. Reithmaier, "Room Termperature Quantum Coherence Phenomena in QD-SOAs", Conf. on Lasers and Electro-Optics (CLEO), paper SM1F.1, San Jose, USA (invited, May 2015)
- J.P. Reithmaier, S. Banyoudeh, A. Abdollahinia, A. Becker, V. Sichkovskyi, O. Eyal. G. Eisenstein, M. Bjelica, B. Witzigmann, G. Moille, S. Combrie, A. DeRossi, "InP-Based Nanostructured Semiconductors for Telecom Applications", German - French - Korean Workshop, Würzburg, Germany (invited, December 2015) (pptx-File, 14 MB)
- A. Becker, M. Bjelica, V. Sichkovskyi, A. Rippien, F. Schnabel, P. Baum, B. Witzigmann, J.P. Reithmaier, "InP-based narrow-linewidth widely tunable QD-DFB lasers", VDE-ITG meeting, Leipzig, Germany (May 2015) (pdf-File)
- A. Becker, V. Sichkovskyi, M. Bjelica, O. Eyal, P. Baum, A. Rippien, F. Schnabel, B. Witzigmann, G. Eisenstein, J.P. Reithmaier, "InP-based narrow-linewidth tunable quantum dot distributed feedback laser for coherent optical communication", Compoung semiconductor week (CSW), S. Barbara, USA (June 2015) (pptx-File, 3 MB)
- P. Mrowinski, A. Musial, G. Sek, S. Höfling, J.P. Reithmaier, "Tailoring the quantum dash exciton fine structure by magnetic field", IEEE Optical MEMS and Nanophotonics (OMN), Jerusalem, Israel (August 2015)
- S. Banyoudeh, A. Abdollanhinia, V. Sichkovskyi, J.P. Reithmaier, "High temperature operation of 1.55 µm InAs quantum dot lasers with high T0 and T1 values", European Semiconducto Laser Workshop, Madrid, Spain (September 2015) (pptx-File, 3 MB)