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Journal Papers

Invited Conference Contributions

  • J.P. Reithmaier, "Impact of nanoscale physics on the performance
    of optoelectronic devices", Conf. on Physics of Quantum Electronics (PQE), Snowbird, Utah, USA (plenary talk, January 2017).
  • J.P. Reithmaier, G. Eisenstein, "High-Bandwidth Temperature-Stable 1.55 µm Quantum Dot Lasers", SPIE Photonics West, San Francisco, USA (February 2017).
  • J.P. Reithmaier, "1.5 µm InP-based quantum dot materials for high-performance classical and quantum optical communication", UK Semiconductor, Sheffield, UK (plenary talk, July 2017).
  • J.P. Reithmaier, G. Eisenstein, "InP-based Quantum Dot Lasers", OSA Advanced Photonics Congress, New Orleans, USA (July 2017).
  • M. Benyoucef, J. P. Reithmaier, “Telecom wavelengths single InP-based quantum dots and microcavities”, 7th Korean-German-French workshop on nanophotonics Le Lazaret – Sète, France (October, 2017).
  • J.P. Reithmaier, G. Eisenstein, "Nanoscaled gain material on their impact on laser properties", Workshop on Physics and Technology of Semiconductor Lasers, Krakow, Poland (plenary talk, October 2017).
  • J.P. Reithmaier, G. Eisenstein, "QD laser dynamics and applications in high-speed direct modulation and narrow linewidth emission", International Symposium on Physics  and Applications of Laser Dynamics, Paris, France (Nov. 2017).

Further Conference Contributions

  • N. Felgen, B. Naydenov, A. Schmidt, J.P. Reithmaier, F. Jelezko, C. Popov, Diamond nanopillars and photonic crystals for integration of color centers, 11th New Diamond and Nano Carbons Conference 2017 (NDNC 2017), Cairns, Australia (May 2017).
  • A. Kors, J.P. Reithmaier, M. Benyoucef, "InP-based photonic crystal microcavities embedded with InAs quantum dots for telecom wavelengths", Compound semiconductor week (CSW, ISCS + IPRM), Berlin, Germany (May, 2017), Conf. Proceed., C1.5.
  • A. Abdollahinia, S. Banyoudeh, Ori Eyal, G. Eisenstein, J.P. Reithmaier, "Improved dynamic properties of directly modulated high-speed 1.5 µm quantum dot lasers", Compound semiconductor week (CSW, ISCS + IPRM), Berlin, Germany (May, 2017), Conf. Proceed., C7.6.
  • A. Becker, V. Sichkovskyi, A. Rippien, F. Schnabel, M. Kaiser, J.P. Reithmaier, "InP-based narrow-linewidth widely tunable quantum dot laser device for high-capacity coherent optical communication", VDE-ITG-Tagung, Leipzig, Germany (May, 2017). ITG-Fachbericht 272, 134 (2017).
  • A. Abdollahinia, A. Rippien, S. Banyoudeh, J.P. Reithmaier, "Highly Temperature-Stable 1.5 µm Quantum Dot Lasers", Congress of the International Commission of Optics (ICO), Tokyo, Japan (August, 2017).  Conf. Proceed., M1J-02.
  • M. Schowalter, C. Carmesin, M. Lorke, D. Mourad, T. Grieb, K. Müller‐Caspary, M. Yacob, J. P. Reithmaier, M. Benyoucef, A. Rosenauer and F. Jahnke, “Morphology of InAs/InAlGaAs quantum dots emitting in the low‐loss telecom wavelength range” Microscopy conference, Lausanne, Switzerland (August 2017).
  • A. Kors, L. Rickert, A. Sayyed, K. Fuchs, J. P. Reithmaier, and M. Benyoucef “InP-based photonic crystal cavities embedded with InAs quantum dots for telecom wavelengths”, International Conference on Optics of Excitons in Confined Systems 2017, Bath, UK (September, 2017).